Invention Grant
- Patent Title: Semiconductor device with electrically floating body
- Patent Title (中): 具有电浮体的半导体器件
-
Application No.: US13948943Application Date: 2013-07-23
-
Publication No.: US08796770B2Publication Date: 2014-08-05
- Inventor: Serguei Okhonin
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wilmer Cutler Pickering Hale and Dorr LLP
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
A semiconductor device along with circuits including the same and methods of operating the same are described. The device includes an electrically floating body region, and a gate is disposed over a first portion of the body region. The device includes a source region adjoining a second portion of the body region, the second portion adjacent the first portion and separating the source region from the first portion. The device includes a drain region adjoining a third portion of the body region, the third portion adjacent the first portion and separating the drain region from the first portion.
Public/Granted literature
- US20130308379A1 SEMICONDUCTOR DEVICE WITH ELECTRICALLY FLOATING BODY Public/Granted day:2013-11-21
Information query
IPC分类:
