In a vertical transistor, to raise a drain withstand voltage while lowering an on-resistance. A drift layer 120 is formed above a drain layer 110, and has a first conductivity type. A gate insulating film 170 is formed on a side wall of a concave portion 142. A bottom surface insulating film 172 is formed on a bottom surface of the concave portion 142. A gate electrode 180 is buried in the concave portion 142. A source layer 150 is formed in a channel layer 140. A first conductivity type layer 130 is located between the channel layer 140 and the drift layer 120. An impurity concentration of the first conductivity type layer 130 is higher than an impurity concentration of the drift layer 120.