Invention Grant
US08796761B2 Semiconductor device including charged structure and methods for manufacturing a semiconductor device
有权
包括带电结构的半导体器件和用于制造半导体器件的方法
- Patent Title: Semiconductor device including charged structure and methods for manufacturing a semiconductor device
- Patent Title (中): 包括带电结构的半导体器件和用于制造半导体器件的方法
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Application No.: US13420772Application Date: 2012-03-15
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Publication No.: US08796761B2Publication Date: 2014-08-05
- Inventor: Franz Hirler , Markus Zundel
- Applicant: Franz Hirler , Markus Zundel
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A semiconductor device includes a trench region extending into a drift zone of a semiconductor body from a surface. The semiconductor device further includes a dielectric structure extending along a lateral side of the trench region, wherein a part of the dielectric structure is a charged insulating structure. The semiconductor device further includes a gate electrode in the trench region and a body region of a conductivity type other than the conductivity type of the drift zone. The charged insulating structure adjoins each one of the drift zone, the body region and the dielectric structure and further adjoins or is arranged below a bottom side of a gate dielectric of the dielectric structure.
Public/Granted literature
- US20130240986A1 Semiconductor Device Including Charged Structure and Methods for Manufacturing A Semiconductor Device Public/Granted day:2013-09-19
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