Edge illuminated photodiodes

Invention Grant

US08796750B2 Edge illuminated photodiodes 有权

Title translation: 边缘照明光电二极管

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Patent Title: Edge illuminated photodiodes
Patent Title (中): 边缘照明光电二极管
Application No.: US13674082

Application Date: 2012-11-11
Publication No.: US08796750B2

Publication Date: 2014-08-05
Inventor: Peter Steven Bui , Narayan Dass Taneja , Manoocher Mansouri
Applicant: OSI Optoelectronics
Applicant Address: US CA Hawthorne
Assignee: OSI Optoelectronics, Inc.
Current Assignee: OSI Optoelectronics, Inc.
Current Assignee Address: US CA Hawthorne
Agency: Novel IP
Main IPC: H01L31/062
IPC: H01L31/062 ; H01L31/113 ; H01L31/0232 ; H01L31/06

Abstract:

This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.

Abstract(Chinese):

本发明包括多个边缘照明光电二极管。更具体地，本发明的光电二极管包括新颖的结构，其设计用于最小化由于边缘表面复合引起的响应性的降低并提高量子效率。新颖的结构包括但不限于成角度的小平面，纹理表面区域和适当掺杂的边缘区域。

Public/Granted literature

US20140131825A1 Edge Illuminated Photodiodes Public/Granted day:2014-05-15

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/04	.用作光伏〔PV〕转换器件（制造中其测试入H01L21/66；制造之后其测试入H02S50/10）
H01L31/06	..以至少有一个电位跃变势垒或表面势垒为特征的
H01L31/062	...只是金属—绝缘体—半导体型势垒的