Invention Grant
- Patent Title: Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
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Application No.: US14104924Application Date: 2013-12-12
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Publication No.: US08796734B2Publication Date: 2014-08-05
- Inventor: Anthony J. Lochtefeld , Matthew T. Currie , Zhiyuan Cheng , James Fiorenza , Glyn Braithwaite , Thomas A. Langdo
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.
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