Invention Grant
- Patent Title: Power semiconductor module
- Patent Title (中): 功率半导体模块
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Application No.: US13313713Application Date: 2011-12-07
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Publication No.: US08796730B2Publication Date: 2014-08-05
- Inventor: Young Ki Lee , Dong Soo Seo , Kwang Soo Kim , Young Hoon Kwak
- Applicant: Young Ki Lee , Dong Soo Seo , Kwang Soo Kim , Young Hoon Kwak
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: Ladas & Parry, LLP
- Priority: KR10-2011-0093559 20110916
- Main IPC: H01L29/739
- IPC: H01L29/739

Abstract:
Disclosed herein is a power semiconductor module including: a circuit board having gate, emitter, and collector patterns formed thereon; a first semiconductor chip mounted on the circuit board, having gate and emitter terminals each formed on one surface thereof, and having a collector terminal formed on the other surface thereof; a second semiconductor chip mounted on the first semiconductor chip, having a cathode terminal formed on one surface thereof, and having an anode terminal formed on the other surface thereof; a first conductive connection member having one end disposed between the collector terminal of the first semiconductor chip and the cathode terminal of the second semiconductor chip and the other end contacting the collector pattern of the circuit board; and a second conductive connection member having one end contacting the anode terminal of the second semiconductor chip and the other end contacting the emitter pattern of the circuit board.
Public/Granted literature
- US20130069108A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2013-03-21
Information query
IPC分类: