Invention Grant
US08796697B2 Semiconductor device including transistor chips having oblique gate electrode fingers
有权
包括具有倾斜栅电极指的晶体管芯片的半导体器件
- Patent Title: Semiconductor device including transistor chips having oblique gate electrode fingers
- Patent Title (中): 包括具有倾斜栅电极指的晶体管芯片的半导体器件
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Application No.: US13803515Application Date: 2013-03-14
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Publication No.: US08796697B2Publication Date: 2014-08-05
- Inventor: Tetsuo Kunii , Seiichi Tsuji , Motoyoshi Koyanagi
- Applicant: Tetsuo Kunii , Seiichi Tsuji , Motoyoshi Koyanagi
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer Ltd.
- Priority: JP2012-155501 20120711
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L29/16

Abstract:
A semiconductor device includes: a package; an input matching circuit and an output matching circuit in the package; and transistor chips between the input matching circuit and the output matching circuit in the package. Each transistor chip includes a semiconductor substrate having long sides and short sides that are shorter than the long sides, and a gate electrode, a drain electrode and a source electrode on the semiconductor substrate. The gate electrode has gate fingers arranged along the long sides of the semiconductor substrate and a gate pad commonly connected to the gate fingers and connected to the input matching circuit via a first wire. The drain electrode is connected to the output matching circuit via a second wire. The long sides of the semiconductor substrates of the transistor chips are oblique with respect to an input/output direction extending from the input matching circuit to the output matching circuit.
Public/Granted literature
- US20140014969A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-01-16
Information query
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