Invention Grant
- Patent Title: On-chip plasma charging sensor
- Patent Title (中): 片上等离子体充电传感器
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Application No.: US13035895Application Date: 2011-02-25
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Publication No.: US08796685B2Publication Date: 2014-08-05
- Inventor: Jiuun-Jer Yang
- Applicant: Jiuun-Jer Yang
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN201010118827 20100305
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/66 ; H01L27/115
Abstract:
A device for monitoring charging effects includes a semiconductor substrate having a surface region. The device also includes first, second, and third doped regions spaced apart in the semiconductor substrate and a dielectric layer overlying the surface region. The device also includes a first gate overlying a first portion of the dielectric layer disposed between the first and the second doped regions, and a second gate overlying a second portion of the dielectric layer disposed between the second and the third doped regions, the second gate being characterized by a first surface area. Moreover, the device has a conductive layer electrically coupled to the second gate for collecting plasma charges. The conductive layer is characterized by a second surface area. The first gate is connected to a conductor that is coupled to a bias voltage, and the second gate is a floating gate that is not connected to any voltage.
Public/Granted literature
- US20110215393A1 ON-CHIP PLASMA CHARGING SENSOR Public/Granted day:2011-09-08
Information query
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