Invention Grant
- Patent Title: Hybrid conductor through-silicon-via for power distribution and signal transmission
- Patent Title (中): 用于配电和信号传输的混合导体穿硅通孔
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Application No.: US13962581Application Date: 2013-08-08
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Publication No.: US08796140B1Publication Date: 2014-08-05
- Inventor: Xiaoxiong Gu , Michael Mcallister
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully Scott Murphy & Presser PC
- Agent Anne V. Dougherty, Esq.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768

Abstract:
A method of providing signal, power and ground through a through-silicon-via (TSV), and an integrated circuit chip having a TSV that simultaneously provides signal, power and ground. In one embodiment, the method comprises forming a TSV through a semiconductor substrate, including forming a via in the substrate; and forming a multitude of conductive bars in the via. The multitude of conductive bars include at least one signal bar, at least one power bar, and at least one ground bar. The method further comprises connecting the at least one power bar to a power voltage source to apply power through the TSV; connecting the at least one ground bar to a ground voltage; and connecting the at least one signal bar to a source of an electronic signal to conduct the signal through the TSV and to form a hybrid power-ground-signal TSV in the substrate.
Public/Granted literature
- US20140199834A1 HYBRID CONDUCTOR THROUGH-SILICON-VIA FOR POWER DISTRIBUTION AND SIGNAL TRANSMISSION Public/Granted day:2014-07-17
Information query
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