Invention Grant
US08796137B2 Semiconductor device and method of forming RDL along sloped side surface of semiconductor die for z-direction interconnect
有权
半导体器件和沿着z方向互连的半导体管芯的倾斜侧表面形成RDL的方法
- Patent Title: Semiconductor device and method of forming RDL along sloped side surface of semiconductor die for z-direction interconnect
- Patent Title (中): 半导体器件和沿着z方向互连的半导体管芯的倾斜侧表面形成RDL的方法
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Application No.: US12822488Application Date: 2010-06-24
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Publication No.: US08796137B2Publication Date: 2014-08-05
- Inventor: Reza A. Pagaila , Yaojian Lin , Jun Mo Koo
- Applicant: Reza A. Pagaila , Yaojian Lin , Jun Mo Koo
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC, Ltd.
- Current Assignee: STATS ChipPAC, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Roberts D. Atkins
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A semiconductor device has a first semiconductor die with a sloped side surface. The first semiconductor die is mounted to a temporary carrier. An RDL extends from a back surface of the first semiconductor die along the sloped side surface of the first semiconductor die to the carrier. An encapsulant is deposited over the carrier and a portion of the RDL along the sloped side surface. The back surface of the first semiconductor die and a portion of the RDL is devoid of the encapsulant. The temporary carrier is removed. An interconnect structure is formed over the encapsulant and exposed active surface of the first semiconductor die. The RDL is electrically connected to the interconnect structure. A second semiconductor die is mounted over the back surface of the first semiconductor die. The second semiconductor die has bumps electrically connected to the RDL.
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