Invention Grant
- Patent Title: Nonvolatile storage device and method for manufacturing the same in which insulating film is located between first and second impurity diffusion regions but absent on first impurity diffusion region
- Patent Title (中): 非易失性存储装置及其制造方法，其中绝缘膜位于第一和第二杂质扩散区之间但在第一杂质扩散区上不存在
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Application No.: US13688903Application Date: 2012-11-29
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Publication No.: US08796129B2Publication Date: 2014-08-05
- Inventor: Yukihide Tsuji
- Applicant: Nec Corporation
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-338196 20061215
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763 ; H01L29/40 ; H01L21/28 ; H01L27/115 ; H01L29/423 ; H01L29/66 ; H01L29/792
Abstract:
Provided is an excellent nonvolatile storage device having advantageous in miniaturization and less variation in initial threshold value, and exhibiting a high writing efficiency, without an erasing failure and a retention failure. The nonvolatile storage device is characterized by including a film stack extending from between a semiconductor substrate and a gate electrode onto at least a surface of the gate electrode lying on a first impurity diffusion region side, the film stack including a charge accumulating layer and a tunnel insulating film sequentially from a gate electrode side.
Public/Granted literature
- US20130084698A1 NONVOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-04-04
Information query
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