Invention Grant
- Patent Title: Nanoelectronic structure and method of producing such
- Patent Title (中): 纳米电子结构及其制造方法
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Application No.: US13886478Application Date: 2013-05-03
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Publication No.: US08796119B2Publication Date: 2014-08-05
- Inventor: Lars Ivar Samuelson , Patrik Svensson , Jonas Ohlsson , Truls Lowgren
- Applicant: QuNano AB
- Applicant Address: SE Lund
- Assignee: Qunano AB
- Current Assignee: Qunano AB
- Current Assignee Address: SE Lund
- Agency: The Marbury Law Group PLLC
- Priority: SE0602840 20061222
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
Public/Granted literature
- US20140179087A1 NANOELECTRONIC STRUCTURE AND METHOD OF PRODUCING SUCH Public/Granted day:2014-06-26
Information query
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