Invention Grant
- Patent Title: Isolation trenches
- Patent Title (中): 隔离沟
-
Application No.: US12749866Application Date: 2010-03-30
-
Publication No.: US08796106B2Publication Date: 2014-08-05
- Inventor: Daniele Merlini , Domenico Giusti , Fabrizio Fausto Renzo Toia , Federica Ronchi
- Applicant: Daniele Merlini , Domenico Giusti , Fabrizio Fausto Renzo Toia , Federica Ronchi
- Applicant Address: IT Agrate Brianza (MB)
- Assignee: STMicroelectronics S.R.L.
- Current Assignee: STMicroelectronics S.R.L.
- Current Assignee Address: IT Agrate Brianza (MB)
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/70
Abstract:
A method is for the formation of at least one filled isolation trench having a protective cap in a semiconductor layer, and a semiconductor device with at least one filled isolation trench having a protective cap. The method allows obtaining, in an easy way, filled isolation trenches exhibiting excellent functional and morphological properties. The method therefore allows the obtainment of effective filled isolation trenches which help provide elevated, reliable and stable isolation properties.
Public/Granted literature
- US20110241158A1 ISOLATION TRENCHES Public/Granted day:2011-10-06
Information query
IPC分类:
