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US08796090B2 Semiconductor device with vertical channel transistor and method for fabricating the same 有权
具有垂直沟道晶体管的半导体器件及其制造方法

  • Patent Title: Semiconductor device with vertical channel transistor and method for fabricating the same
  • Patent Title (中): 具有垂直沟道晶体管的半导体器件及其制造方法
  • Application No.: US13716931
    Application Date: 2012-12-17
  • Publication No.: US08796090B2
    Publication Date: 2014-08-05
  • Inventor: Heung-Jae Cho , Tae-Yoon Kim
  • Applicant: SK hynix Inc.
  • Applicant Address: KR Gyeonggi-do
  • Assignee: SK Hynix Inc.
  • Current Assignee: SK Hynix Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Group LLP
  • Priority: KR10-2012-0072782 20120704
  • Main IPC: H01L21/8242
  • IPC: H01L21/8242
Semiconductor device with vertical channel transistor and method for fabricating the same
Abstract:
A method for fabricating a semiconductor device includes forming a plurality of semiconductor body lines in which a plurality of buried bit lines are buried, to be separated by a plurality of trenches, forming a filling layer that fills each of the plurality of trenches, forming a conductive layer over the plurality of semiconductor body lines and the filling layer, forming a plurality of semiconductor pillars over the plurality of semiconductor body lines by etching the conductive layer.
Abstract(Chinese):

一种制造半导体器件的方法，包括：形成多个埋置位线的多个半导体本体线，被多个沟槽隔开，形成填充多个沟槽中的每一个的填充层，形成 在所述多个半导体体线和所述填充层上形成导电层，通过蚀刻所述导电层在所述多个半导体主体线上形成多个半导体柱。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232 ......场效应工艺
H01L21/8234 .......MIS工艺
H01L21/8239 ........存储器结构
H01L21/8242 .........动态随机存取存储结构（DRAM）
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