Invention Grant
US08795954B2 Resist pattern-forming method, and radiation-sensitive resin composition
有权
抗蚀剂图案形成方法和辐射敏感树脂组合物
- Patent Title: Resist pattern-forming method, and radiation-sensitive resin composition
- Patent Title (中): 抗蚀剂图案形成方法和辐射敏感树脂组合物
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Application No.: US13861416Application Date: 2013-04-12
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Publication No.: US08795954B2Publication Date: 2014-08-05
- Inventor: Hirokazu Sakakibara , Taiichi Furukawa , Reiko Kimura , Masafumi Hori
- Applicant: JSR Corporation
- Applicant Address: JP Tokyo
- Assignee: JSR Corporation
- Current Assignee: JSR Corporation
- Current Assignee Address: JP Tokyo
- Agency: Ditthavong & Steiner, P.C.
- Priority: JP2010-233027 20101015; JP2011-066669 20110324
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed using a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer and a radiation-sensitive acid generator. The polymer has a weight average molecular weight in terms of the polystyrene equivalent of greater than 6,000 and includes a first structural unit that includes an acid-labile group. The polymer includes less than 5 mol % or 0 mol % of a second structural unit that includes a hydroxyl group.
Public/Granted literature
- US20130224666A1 RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION Public/Granted day:2013-08-29
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