Invention Grant
US08795949B2 Resist pattern improving material, method for forming resist pattern, and method for producing semiconductor device
有权
抗蚀图案改善材料，形成抗蚀剂图案的方法，以及半导体器件的制造方法
- Patent Title: Resist pattern improving material, method for forming resist pattern, and method for producing semiconductor device
- Patent Title (中): 抗蚀图案改善材料，形成抗蚀剂图案的方法，以及半导体器件的制造方法
-
Application No.: US13242206Application Date: 2011-09-23
-
Publication No.: US08795949B2Publication Date: 2014-08-05
- Inventor: Miwa Kozawa , Koji Nozaki
- Applicant: Miwa Kozawa , Koji Nozaki
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2010-280849 20101216; JP2011-047718 20110304
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004 ; G03F7/40
Abstract:
To provide a resist pattern improving material, containing: a compound represented by the following general formula (1), or a compound represented by the following general formula (2), or both thereof; and water: where R1 and R2 are each independently a hydrogen atom, or a C1-C3 alkyl group; m is an integer of 1 to 3; and n is an integer of 3 to 30, where p is an integer of 8 to 20; q is an integer of 3 to 30; and r is an integer of 1 to 8.
Public/Granted literature
Information query
