Invention Grant
US08795943B2 Negative photoresist composition and patterning method for device
有权
负光致抗蚀剂组合物和装置的图案化方法
- Patent Title: Negative photoresist composition and patterning method for device
- Patent Title (中): 负光致抗蚀剂组合物和装置的图案化方法
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Application No.: US13100773Application Date: 2011-05-04
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Publication No.: US08795943B2Publication Date: 2014-08-05
- Inventor: Chan-Hyo Park , Kyung-Jun Kim , Yu-Na Kim
- Applicant: Chan-Hyo Park , Kyung-Jun Kim , Yu-Na Kim
- Applicant Address: KR Seoul
- Assignee: LG Chem, Ltd.
- Current Assignee: LG Chem, Ltd.
- Current Assignee Address: KR Seoul
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: KR10-2010-0042057 20100504
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004 ; G03F7/40

Abstract:
The present invention relates to a negative photoresist composition and a patterning method for device in which a photoresist pattern having a high sensitivity with a good reverse taper profile can be formed not only to realize an effective patterning of various thin films but also to facilitate removal of the photoresist pattern after the patterning. The photoresist composition comprises an alkali-soluble binder resin; a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; a cross-linking agent having an alkoxy structure; and a solvent.
Public/Granted literature
- US20110274853A1 NEGATIVE PHOTORESIST COMPOSITION AND PATTERNING METHOD FOR DEVICE Public/Granted day:2011-11-10
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