Invention Grant
US08795554B2 Sputtering target for oxide semiconductor, comprising InGaO3(ZnO) crystal phase and process for producing the sputtering target
有权
包括InGaO 3（ZnO）晶相的氧化物半导体溅射靶和溅射靶的制造方法
- Patent Title: Sputtering target for oxide semiconductor, comprising InGaO3(ZnO) crystal phase and process for producing the sputtering target
- Patent Title (中): 包括InGaO 3（ZnO）晶相的氧化物半导体溅射靶和溅射靶的制造方法
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Application No.: US13001511Application Date: 2009-06-26
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Publication No.: US08795554B2Publication Date: 2014-08-05
- Inventor: Koki Yano , Hirokazu Kawashima
- Applicant: Koki Yano , Hirokazu Kawashima
- Applicant Address: JP Tokyo
- Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Millen, White, Zelano & Branigan, P.C.
- Priority: JP2008-169165 20080627
- International Application: PCT/JP2009/061702 WO 20090626
- International Announcement: WO2009/157535 WO 20091230
- Main IPC: H01B1/00
- IPC: H01B1/00 ; H01L29/786 ; C23C14/08 ; C04B35/453 ; C04B35/01 ; C23C14/34 ; H01L21/02
Abstract:
Disclosed is a sputtering target for an oxide semiconductor, comprising In, Ga, and Zn. Also disclosed are a process for producing the sputtering target, a thin film of an oxide semiconductor using a sputtering target, and a method for thin-film transistor formation. The sputtering target comprises an oxide sintered compact containing a compound having a homologous crystal structure represented by InGaO3(ZnO) and exhibits such an X-ray diffraction pattern that the proportion of peaks at 2θ=62 to 63 degrees to the maximum peak of InGaO3(ZnO) is not more than 3%.
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