Invention Grant
- Patent Title: Core wire holder for producing polycrystalline silicon and method for producing polycrystalline silicon
- Patent Title (中): 用于生产多晶硅的芯线架和多晶硅生产方法
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Application No.: US13502015Application Date: 2010-07-27
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Publication No.: US08793853B2Publication Date: 2014-08-05
- Inventor: Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume
- Applicant: Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-237017 20091014
- International Application: PCT/JP2010/004773 WO 20100727
- International Announcement: WO2011/045881 WO 20110421
- Main IPC: B25B1/00
- IPC: B25B1/00

Abstract:
One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.
Public/Granted literature
- US20120201976A1 CORE WIRE HOLDER FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON Public/Granted day:2012-08-09
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