Invention Grant
US08773931B2 Method of detecting connection defects of memory and memory capable of detecting connection defects thereof
有权
检测能够检测其连接缺陷的存储器和存储器的连接缺陷的方法
- Patent Title: Method of detecting connection defects of memory and memory capable of detecting connection defects thereof
- Patent Title (中): 检测能够检测其连接缺陷的存储器和存储器的连接缺陷的方法
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Application No.: US13525372Application Date: 2012-06-18
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Publication No.: US08773931B2Publication Date: 2014-07-08
- Inventor: Min-Chih Chang , Shih-Hsing Wang , Te-Yi Yu , Lien-Sheng Yang
- Applicant: Min-Chih Chang , Shih-Hsing Wang , Te-Yi Yu , Lien-Sheng Yang
- Applicant Address: TW Hsinchu
- Assignee: Etron Technology, Inc.
- Current Assignee: Etron Technology, Inc.
- Current Assignee Address: TW Hsinchu
- Agent Winston Hsu; Scott Margo
- Priority: TW100123823A 20110706
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C29/02 ; G11C29/12 ; G11C29/50
Abstract:
By inputting voltages to global word lines of a memory, and by detecting currents of corresponding global word lines, a relation function between the currents and the voltages can be generated, and connection defects on the global word lines can be determined according to various types of deviation of a relation curve corresponding to the relation function between the currents and voltages.
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