Invention Grant
US08767496B2 Bias sensing in DRAM sense amplifiers through voltage-coupling/decoupling device
有权
通过电压耦合/去耦器件在DRAM读出放大器中进行偏置感测
- Patent Title: Bias sensing in DRAM sense amplifiers through voltage-coupling/decoupling device
- Patent Title (中): 通过电压耦合/去耦器件在DRAM读出放大器中进行偏置感测
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Application No.: US13039169Application Date: 2011-03-02
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Publication No.: US08767496B2Publication Date: 2014-07-01
- Inventor: David J. McElroy , Stephen L. Casper
- Applicant: David J. McElroy , Stephen L. Casper
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
Voltage coupling/decoupling devices are provided within DRAM devices for improving the bias sensing of sense amplifiers and thus the refresh performance. The voltage coupling/decoupling devices couple or decouple bias voltage from corresponding digit lines coupled to the sense amplifiers. By coupling and decoupling voltage from the digit lines, the time interval between refresh operations can be increased.
Public/Granted literature
- US20110157962A1 BIAS SENSING IN DRAM SENSE AMPLIFIERS THROUGH VOLTAGE-COUPLING/DECOUPLING DEVICE Public/Granted day:2011-06-30
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