Invention Grant
US08705303B2 Semiconductor device and control method of the same 有权
半导体器件及其控制方法相同

  • Patent Title: Semiconductor device and control method of the same
  • Patent Title (中): 半导体器件及其控制方法相同
  • Application No.: US13413527
    Application Date: 2012-03-06
  • Publication No.: US08705303B2
    Publication Date: 2014-04-22
  • Inventor: Akira OgawaMasaru Yano
  • Applicant: Akira OgawaMasaru Yano
  • Applicant Address: US CA Sunnyvale
  • Assignee: Spansion LLC
  • Current Assignee: Spansion LLC
  • Current Assignee Address: US CA Sunnyvale
  • Priority: WOPCT/JP2005/011815 20050628
  • Main IPC: G11C7/00
  • IPC: G11C7/00
Semiconductor device and control method of the same
Abstract:
The present invention provides a semiconductor memory and a control method therefor, the semiconductor device including a first current-voltage conversion circuit connected to a core cell provided in a nonvolatile memory cell array, a second current-voltage conversion circuit connected to a reference cell through a reference cell data line, a sense amplifier sensing an output from the first current-voltage conversion circuit and an output from the second current-voltage conversion circuit, a compare circuit comparing a voltage level at the reference cell data line with a predefined voltage level, and a charging circuit charging the reference cell data line, if the voltage level at the reference cell data line is lower than the predefined voltage level during pre-charging the reference cell data line. According to the present invention, the pre-charging period of the reference cell data line can be shortened, and the data read time can be shortened.
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