Invention Grant
- Patent Title: Semiconductor memory devices having self-refresh capability
- Patent Title (中): 具有自刷新能力的半导体存储器件
-
Application No.: US13241977Application Date: 2011-09-23
-
Publication No.: US08705302B2Publication Date: 2014-04-22
- Inventor: Yong Hoon Kang , Joo Young Hwang , Jae Young Choi , Young Joon Choi
- Applicant: Yong Hoon Kang , Joo Young Hwang , Jae Young Choi , Young Joon Choi
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2010-0092866 20100924; KR10-2010-0110588 20101108
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor memory device includes at least one memory bank including a plurality of memory cells and a self-refresh controller configured to generate a refresh address and to output a row address for a page to be refreshed based on the refresh address. The semiconductor memory device drives the at least one memory bank based on the row address and selectively refreshes pages in the at least one memory bank in response to the row address.
Public/Granted literature
- US20120075947A1 Semiconductor Memory Devices Having Self-Refresh Capability Public/Granted day:2012-03-29
Information query