Invention Grant
US08694840B2 Memory test isolation logic bank with separate test enable input
有权
内存测试隔离逻辑组具有单独的测试使能输入
- Patent Title: Memory test isolation logic bank with separate test enable input
- Patent Title (中): 内存测试隔离逻辑组具有单独的测试使能输入
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Application No.: US13963697Application Date: 2013-08-09
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Publication No.: US08694840B2Publication Date: 2014-04-08
- Inventor: Daniel R. Burggraf, III , Hari Pendurty
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Lawrence J. Bassuk; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
An integrated circuit is described that has a substrate with a memory array with dedicated support hardware formed on the substrate. An access wrapper circuit is coupled to address and data lines of the memory array and to control lines of the dedicated support hardware. The wrapper circuit is configured to provide an access port to the memory array. A test controller is formed on the substrate and coupled in parallel with the access wrapper circuit to the address and data lines of the memory array and to the control lines of the dedicated support hardware, wherein the test controller is operable to perform a test of the memory array by manipulating control signals to the support hardware in addition to those required to write data patterns into the memory array and to read the contents of the memory array.
Public/Granted literature
- US20130322176A1 ON-CHIP MEMORY TESTING Public/Granted day:2013-12-05
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