Invention Grant
US08694754B2 Non-volatile memory-based mass storage devices and methods for writing data thereto
有权
基于非易失性存储器的大容量存储设备和用于向其写入数据的方法
- Patent Title: Non-volatile memory-based mass storage devices and methods for writing data thereto
- Patent Title (中): 基于非易失性存储器的大容量存储设备和用于向其写入数据的方法
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Application No.: US13251491Application Date: 2011-10-03
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Publication No.: US08694754B2Publication Date: 2014-04-08
- Inventor: Franz Michael Schuette , William Ward Clawson
- Applicant: Franz Michael Schuette , William Ward Clawson
- Applicant Address: US CA San Jose
- Assignee: OCZ Technology Group, Inc.
- Current Assignee: OCZ Technology Group, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Hartman Global IP Law
- Agent Gary M. Hartman; Domenica N. S. Hartman
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C16/10

Abstract:
A non-volatile solid state memory-based mass storage device having at least one non-volatile memory component and methods of operating the storage device. In one aspect of the invention, the one or more memory components define a memory space partitioned into user memory and over-provisioning pools based on a P/E cycle count stored in a block information record. The storage device transfers the P/E cycle count of erased blocks to a host and the host stores the P/E cycle count in a content addressable memory. During a host write to the storage device, the host issues a low P/E cycle count number as a primary address to the content addressable memory, which returns available block addresses of blocks within the over-provisioning pool as a first dimension in a multidimensional address space. Changed files are preferably updated in append mode and the previous version can be maintained for version control.
Public/Granted literature
- US20130067138A1 NON-VOLATILE MEMORY-BASED MASS STORAGE DEVICES AND METHODS FOR WRITING DATA THERETO Public/Granted day:2013-03-14
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