Invention Grant
- Patent Title: Capacitive transducer and fabrication method
- Patent Title (中): 电容式传感器及其制造方法
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Application No.: US12643417Application Date: 2009-12-21
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Publication No.: US08693711B2Publication Date: 2014-04-08
- Inventor: Tzong-Che Ho , Lung-Tai Chen , Yao-Jung Lee , Chao-Ta Huang , Li-Chi Pan , Yu-Sheng Hsieh
- Applicant: Tzong-Che Ho , Lung-Tai Chen , Yao-Jung Lee , Chao-Ta Huang , Li-Chi Pan , Yu-Sheng Hsieh
- Applicant Address: TW
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Priority: TW98143286A 20091217
- Main IPC: H04R25/00
- IPC: H04R25/00

Abstract:
A capacitive transducer and fabrication method are disclosed. The capacitive transducer includes a substrate, a first electrode mounted on the substrate, a cap having a through-hole and a cavity beside the through-hole, a second electrode mounted on the cap across the through-hole. The second electrode is deformable in response to pressure fluctuations applied thereto via the through-hole and defines, together with the first electrode, as a capacitor. The capacitor includes a capacitance variable with the pressure fluctuations and the cavity defines a back chamber for the deformable second electrode.
Public/Granted literature
- US20110150261A1 CAPACITIVE TRANSDUCER AND FABRICATION METHOD Public/Granted day:2011-06-23
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