Loss modulated silicon evanescent lasers are disclosed. A loss-modulated semiconductor laser device in accordance with one or more embodiments of the present invention comprises a semiconductor-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a waveguide in a semiconductor layer of the SOI structure, and a semiconductor structure bonded to the semiconductor layer of the SOI structure, wherein at least one region in the semiconductor layer of the SOI structure controls a photon lifetime in the semiconductor laser device.