A non-volatile memory cell including a resistivity change material configured to reversibly change state between at least two stable states having different electrical resistances and conformed such that transformation from one state to another is obtained by controlling the temperature increase or decrease of the resistivity change material, wherein the resistivity change material has an ohmic component Ron-mat defined by the ratio between an increment in the programming voltage Vprog causing an increment in a programming current Iprog, wherein the resistivity change material has a non-ohmic component defined by a maintenance voltage Vh such that Vh is greater than zero when the programming voltage Iprog passes through the resistivity change material (22); and greater than an ohmic voltage equal to Ron-mat×Iprog.