Invention Grant
- Patent Title: Semiconductor apparatus
- Patent Title (中): 半导体装置
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Application No.: US12958256Application Date: 2010-12-01
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Publication No.: US08693150B2Publication Date: 2014-04-08
- Inventor: Kazumasa Akai , Masahiro Nakahata
- Applicant: Kazumasa Akai , Masahiro Nakahata
- Applicant Address: US AZ Phoenix JP Gunma
- Assignee: Semiconductor Components Industries, LLC,Sanyo Semiconductor Co., Ltd.
- Current Assignee: Semiconductor Components Industries, LLC,Sanyo Semiconductor Co., Ltd.
- Current Assignee Address: US AZ Phoenix JP Gunma
- Agency: Osha Liang LLP
- Priority: JP2009-273810 20091201
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
A semiconductor apparatus includes: first and second power-supply terminals; an internal circuit connected between the first and second power-supply terminals; and a protection circuit connected in parallel with the internal circuit between the first and second power-supply terminals, the protection circuit including: a series circuit that includes a resistor and a first capacitor, and is connected in parallel with the internal circuit between the first and second power-supply terminals; a first MOS transistor that is connected in parallel with the series circuit, and is controlled according to a voltage at a connection point between the resistor and the first capacitor; and a switch circuit that is connected in parallel with the resistor, is turned on in a delayed manner after a power-supply voltage is applied between the first and second power-supply terminals, and changes the voltage at the connection point so that the first MOS transistor is turned off.
Public/Granted literature
- US08634173B2 Semiconductor apparatus Public/Granted day:2014-01-21
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