Invention Grant
- Patent Title: Transient suppression device and method therefor
- Patent Title (中): 瞬态抑制装置及其方法
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Application No.: US12469544Application Date: 2009-05-20
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Publication No.: US08693149B2Publication Date: 2014-04-08
- Inventor: Alan R. Ball , Stephen P. Robb
- Applicant: Alan R. Ball , Stephen P. Robb
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC.
- Current Assignee: Semiconductor Components Industries, LLC.
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H02H9/00
- IPC: H02H9/00
Abstract:
In one embodiment, a semiconductor device to provide protection for electronic circuits, the semiconductor device typically includes a vertical MOS transistor, a reference circuit, and an amplifier. The amplifier amplifies the reference voltage to enable the vertical MOS transistor responsively to a transient event.
Public/Granted literature
- US20100296210A1 TRANSIENT SUPPRESSION DEVICE AND METHOD THEREFOR Public/Granted day:2010-11-25
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