Invention Grant
US08692460B2 Highly doped electro-optically active organic diode with short protection layer
有权
具有短保护层的高掺杂电光活性有机二极管
- Patent Title: Highly doped electro-optically active organic diode with short protection layer
- Patent Title (中): 具有短保护层的高掺杂电光活性有机二极管
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Application No.: US12373536Application Date: 2007-07-13
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Publication No.: US08692460B2Publication Date: 2014-04-08
- Inventor: Michael Buchel , Dietrich Bertram
- Applicant: Michael Buchel , Dietrich Bertram
- Applicant Address: NL Eindhoven
- Assignee: Koninklijke Philips N.V.
- Current Assignee: Koninklijke Philips N.V.
- Current Assignee Address: NL Eindhoven
- Agent David Zivan; Mark Beloborodov
- Priority: EP06117443 20060719
- International Application: PCT/IB2007/052802 WO 20070713
- International Announcement: WO2008/010171 WO 20080124
- Main IPC: H01L51/54
- IPC: H01L51/54

Abstract:
An electro-optically active organic diode has anode and cathode electrodes, an electro-optically active organic layer between the electrodes, and a charge carrier organic layer between the electro-optically active organic layer and the cathode electrode layer. The charge carrier organic layer is formed of a highly doped organic semiconductor material. A short protection layer is arranged between the cathode electrode layer and the charge carrier organic layer. The short protection layer is formed of an inorganic semiconductor material.
Public/Granted literature
- US20090174323A1 HIGHLY DOPED ELECTRO-OPTICALLY ACTIVE ORGANIC DIODE WITH SHORT PROTECTION LAYER Public/Granted day:2009-07-09
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