Invention Grant
US08692460B2 Highly doped electro-optically active organic diode with short protection layer 有权
具有短保护层的高掺杂电光活性有机二极管

  • Patent Title: Highly doped electro-optically active organic diode with short protection layer
  • Patent Title (中): 具有短保护层的高掺杂电光活性有机二极管
  • Application No.: US12373536
    Application Date: 2007-07-13
  • Publication No.: US08692460B2
    Publication Date: 2014-04-08
  • Inventor: Michael BuchelDietrich Bertram
  • Applicant: Michael BuchelDietrich Bertram
  • Applicant Address: NL Eindhoven
  • Assignee: Koninklijke Philips N.V.
  • Current Assignee: Koninklijke Philips N.V.
  • Current Assignee Address: NL Eindhoven
  • Agent David Zivan; Mark Beloborodov
  • Priority: EP06117443 20060719
  • International Application: PCT/IB2007/052802 WO 20070713
  • International Announcement: WO2008/010171 WO 20080124
  • Main IPC: H01L51/54
  • IPC: H01L51/54
Highly doped electro-optically active organic diode with short protection layer
Abstract:
An electro-optically active organic diode has anode and cathode electrodes, an electro-optically active organic layer between the electrodes, and a charge carrier organic layer between the electro-optically active organic layer and the cathode electrode layer. The charge carrier organic layer is formed of a highly doped organic semiconductor material. A short protection layer is arranged between the cathode electrode layer and the charge carrier organic layer. The short protection layer is formed of an inorganic semiconductor material.
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