Invention Grant
- Patent Title: Alignment mark design for semiconductor device
- Patent Title (中): 半导体器件对准标记设计
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Application No.: US13494879Application Date: 2012-06-12
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Publication No.: US08692393B2Publication Date: 2014-04-08
- Inventor: Feng-Nien Tsai
- Applicant: Feng-Nien Tsai
- Applicant Address: TW
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW
- Agency: Baker & McKenzie LLP
- Main IPC: H01L23/544
- IPC: H01L23/544

Abstract:
Better alignment mark designs for semiconductor devices may substantially lessen the frequency of layer misalignment scanner alignment problems. Exemplary alignment mark designs substantially avoid or minimize damage during the fill-in and etching and chemical mechanical processing processes. Thus, additional processing steps to even out various layers or to address the misalignment problems may also be avoided.
Public/Granted literature
- US20130328221A1 Alignment mark design for semiconductor device Public/Granted day:2013-12-12
Information query
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