Invention Grant
- Patent Title: Crack stop barrier and method of manufacturing thereof
- Patent Title (中): 裂缝挡板及其制造方法
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Application No.: US12898468Application Date: 2010-10-05
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Publication No.: US08692392B2Publication Date: 2014-04-08
- Inventor: Sylvia Baumann Winter
- Applicant: Sylvia Baumann Winter
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/544
- IPC: H01L23/544
Abstract:
A wafer is disclosed. The wafer comprises a plurality of chips and a plurality of kerfs. A kerf of the plurality of kerfs separates one chip from another chip. The kerf comprises a crack stop barrier.
Public/Granted literature
- US20120080673A1 Crack Stop Barrier and Method of Manufacturing Thereof Public/Granted day:2012-04-05
Information query
IPC分类:
