Invention Grant
- Patent Title: Semiconductor apparatus and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13549795Application Date: 2012-07-16
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Publication No.: US08692371B2Publication Date: 2014-04-08
- Inventor: Byoung-Gue Min
- Applicant: Byoung-Gue Min
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2011-0075657 20110729
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
Disclosed are a semiconductor apparatus and a manufacturing method thereof. The manufacturing method of the semiconductor apparatus includes: forming a semiconductor chip on a semiconductor substrate; adhering a carrier wafer with a plurality of through holes onto the semiconductor chip; polishing the semiconductor substrate; forming a first via hole at the rear side of the polished semiconductor substrate; forming a first metal layer below the polished semiconductor substrate and at the first via hole; and removing the carrier wafer from the polished semiconductor substrate.
Public/Granted literature
- US20130026631A1 SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-01-31
Information query
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