Invention Grant
- Patent Title: Strained-silicon transistor and method of making the same
- Patent Title (中): 应变硅晶体管及其制造方法
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Application No.: US12687133Application Date: 2010-01-14
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Publication No.: US08692332B2Publication Date: 2014-04-08
- Inventor: Jei-Ming Chen , Hsiu-Lien Liao , Yu-Tuan Tsai , Teng-Chun Tsai
- Applicant: Jei-Ming Chen , Hsiu-Lien Liao , Yu-Tuan Tsai , Teng-Chun Tsai
- Applicant Address: TW Science Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/70
- IPC: H01L21/70
Abstract:
A structure of a strained-silicon transistor includes a PMOS disposed on a substrate, a silicon nitride layer positioned on the PMOS, and a compressive stress film disposed on the silicon nitride layer, wherein the silicon nitride has a stress between −0.1 Gpa and −3.2 Gpa, and the stress of the silicon nitride is smaller than the stress of the compressive stress layer.
Public/Granted literature
- US20110169095A1 STRAINED-SILICON TRANSISTOR AND METHOD OF MAKING THE SAME Public/Granted day:2011-07-14
Information query
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