Invention Grant
- Patent Title: Recessed memory cell access devices and gate electrodes
- Patent Title (中): 嵌入式存储单元访问器件和栅电极
-
Application No.: US13276141Application Date: 2011-10-18
-
Publication No.: US08692320B2Publication Date: 2014-04-08
- Inventor: Jasper S. Gibbons , Darren V. Young , Kunal R. Parekh , Casey Smith
- Applicant: Jasper S. Gibbons , Darren V. Young , Kunal R. Parekh , Casey Smith
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
Recessed access transistor devices used with semiconductor devices may include gate electrodes having materials with multiple work functions, materials that are electrically isolated from each other and supplied with two or more voltage supplies, or materials that create a diode junction within the gate electrode.
Public/Granted literature
- US20120061751A1 RECESSED MEMORY CELL ACCESS DEVICES AND GATE ELECTRODES Public/Granted day:2012-03-15
Information query
IPC分类:
