Invention Grant
US08691654B2 Semiconductor device having stressor film and method of manufacturing semiconductor device
有权
具有应力膜的半导体器件及半导体器件的制造方法
- Patent Title: Semiconductor device having stressor film and method of manufacturing semiconductor device
- Patent Title (中): 具有应力膜的半导体器件及半导体器件的制造方法
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Application No.: US13089743Application Date: 2011-04-19
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Publication No.: US08691654B2Publication Date: 2014-04-08
- Inventor: Shigeo Satoh , Kaina Suzuki
- Applicant: Shigeo Satoh , Kaina Suzuki
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2010-180353 20100811
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A first insulating film is formed above a semiconductor substrate with a device isolation insulating film defining a device region, a gate electrode and source/drain region formed. The first insulating film is etched, leaving the first insulating film in a recess formed in an edge of the device isolation insulating film. A second insulating film applying a stress to the semiconductor substrate is formed after etching the first insulating film.
Public/Granted literature
- US20120038004A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-02-16
Information query
IPC分类:
