Invention Grant
- Patent Title: Memory cells and methods of forming memory cells
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Application No.: US13480610Application Date: 2012-05-25
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Publication No.: US08691622B2Publication Date: 2014-04-08
- Inventor: John Smythe , Gurtej S. Sandhu
- Applicant: John Smythe , Gurtej S. Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/06
- IPC: H01L21/06 ; H01L21/311
Abstract:
A method of forming a memory cell includes forming programmable material within an opening in dielectric material over an elevationally inner conductive electrode of the memory cell. Conductive electrode material is formed over the dielectric material and within the opening. The programmable material within the opening has an elevationally outer edge surface angling elevationally and laterally inward relative to a sidewall of the opening. The conductive electrode material is formed to cover over the angling surface of the programmable material within the opening. The conductive electrode material is removed back at least to an elevationally outermost surface of the dielectric material and to leave the conductive electrode material covering over the angling surface of the programmable material within the opening. The conductive electrode material constitutes at least part of an elevationally outer conductive electrode of the memory cell. Memory cells independent of method of manufacture are also disclosed.
Public/Granted literature
- US20130313678A1 Memory Cells And Methods Of Forming Memory Cells Public/Granted day:2013-11-28
Information query
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