Invention Grant
- Patent Title: Method for manufacturing a light emitting diode with smooth surface for reflective electrode
- Patent Title (中): 制造反射电极光滑表面的发光二极管的方法
-
Application No.: US13447574Application Date: 2012-04-16
-
Publication No.: US08691606B2Publication Date: 2014-04-08
- Inventor: Chao-Kun David Lin , Heng Liu
- Applicant: Chao-Kun David Lin , Heng Liu
- Applicant Address: JP Tokyo
- Assignee: Toshiba Techno Center Inc.
- Current Assignee: Toshiba Techno Center Inc.
- Current Assignee Address: JP Tokyo
- Agency: Hogan Lovells US LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.
Public/Granted literature
- US20130102095A1 Light Emitting Diodes with Smooth Surface for Reflective Electrode Public/Granted day:2013-04-25
Information query
IPC分类:
