Invention Grant
- Patent Title: Crystallization processing for semiconductor applications
- Patent Title (中): 半导体应用的结晶处理
-
Application No.: US13679633Application Date: 2012-11-16
-
Publication No.: US08691605B2Publication Date: 2014-04-08
- Inventor: Stephen Moffatt
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/268
- IPC: H01L21/268
Abstract:
A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material.
Public/Granted literature
- US20130143417A1 CRYSTALLIZATION PROCESSING FOR SEMICONDUCTOR APPLICATIONS Public/Granted day:2013-06-06
Information query
IPC分类:
