Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13259009Application Date: 2010-04-22
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Publication No.: US08691377B2Publication Date: 2014-04-08
- Inventor: Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
- Applicant: Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2009-103494 20090422
- International Application: PCT/JP2010/002899 WO 20100422
- International Announcement: WO2010/122795 WO 20101028
- Main IPC: H01L23/488
- IPC: H01L23/488
Abstract:
A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.
Public/Granted literature
- US20120018890A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-01-26
Information query
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