Invention Grant
- Patent Title: Plasma processor
- Patent Title (中): 等离子处理器
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Application No.: US12176501Application Date: 2008-07-21
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Publication No.: US08689733B2Publication Date: 2014-04-08
- Inventor: Chishio Koshimizu , Yohei Yamazawa
- Applicant: Chishio Koshimizu , Yohei Yamazawa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2001-144938 20010515
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306

Abstract:
This invention includes a first filter (27) connected between a susceptor (21) and ground and having a variable impedance, a sensor (28) for detecting an electrical signal based on the state of a plasma (P) generated in a process chamber (11), and a control means (36) for controlling the impedance of the first filter (27) on the basis of a detection result output from the sensor (28). Thus, a preferable plasma distribution to match the object of the plasma process can be realized.
Public/Granted literature
- US20080277062A1 Plasma Processor Public/Granted day:2008-11-13
Information query
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