Invention Grant
- Patent Title: Method for forming integrated circuit assembly
- Patent Title (中): 集成电路组件的形成方法
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Application No.: US12490804Application Date: 2009-06-24
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Publication No.: US08689437B2Publication Date: 2014-04-08
- Inventor: Bing Dang , David Hirsch Danovitch , Mario John Interrante , John Ulrich Knickerbocker , Michael Jay Shapiro , Van Thanh Truong
- Applicant: Bing Dang , David Hirsch Danovitch , Mario John Interrante , John Ulrich Knickerbocker , Michael Jay Shapiro , Van Thanh Truong
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Daniel P. Morris
- Main IPC: H01R9/00
- IPC: H01R9/00 ; H05K3/00

Abstract:
A method for forming an integrated circuit assembly comprises forming first solder bumps on a first die, and forming a first structure comprising the first die, the first solder bumps, a first flux, and a first substratum. The first die is placed upon the first substratum. The first solder bumps are between the first die and the first substratum. The first flux holds the first die substantially flat and onto the first substratum.
Public/Granted literature
- US20100326702A1 INTEGRATED CIRCUIT ASSEMBLY Public/Granted day:2010-12-30
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