Invention Grant
- Patent Title: Extracting capacitance and resistance from FinFET devices
-
Application No.: US13655420Application Date: 2012-10-18
-
Publication No.: US08689157B1Publication Date: 2014-04-01
- Inventor: Chi-Yuan Lo , Mikhail Khapaev
- Applicant: Cadence Design Systems, Inc.
- Applicant Address: US CA San Jose
- Assignee: Cadence Design Systems, Inc.
- Current Assignee: Cadence Design Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Adeli LLP
- Main IPC: G06F9/455
- IPC: G06F9/455 ; G06F17/50

Abstract:
Some embodiments of the invention provide a method for verifying an integrated circuit (IC) design. The method receives a process description file that specifies a process technology for building the IC. The process description file describes a particular device type in which a first conductor overlaps a second conductor by recessing from the second conductor in one or more cut-outs. Based on the process description file, the method finds a section of the IC design that matches the particular device type and uses the description of the particular device type to compute a capacitance value and a resistance value for the section of the IC design.
Information query