Invention Grant
- Patent Title: Semiconductor device and power supply control method of the semiconductor device
- Patent Title (中): 半导体器件的半导体器件和电源控制方法
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Application No.: US13206974Application Date: 2011-08-10
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Publication No.: US08689031B2Publication Date: 2014-04-01
- Inventor: Ryo Hirano
- Applicant: Ryo Hirano
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-180331 20100811
- Main IPC: G06F1/00
- IPC: G06F1/00 ; G06F1/26 ; H01L25/00 ; H03K17/00 ; G11C5/14

Abstract:
A semiconductor device includes an internal circuit, a power supply control circuit which controls supply of a power supply to the internal circuit upon receipt of a first control signal, and a control signal generation circuit which outputs the first control signal upon receipt of a second control signal. The control signal generation circuit does not deactivate the first control signal when an inactive period of the second control signal is equal to or less than a first period and deactivates the first control signal when the inactive period of the second control signal is more than the first period.
Public/Granted literature
- US20120042188A1 SEMICONDUCTOR DEVICE AND POWER SUPPLY CONTROL METHOD OF THE SEMICONDUCTOR DEVICE Public/Granted day:2012-02-16
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