Invention Grant
- Patent Title: Semiconductor storage apparatus and semiconductor integrated circuit
- Patent Title (中): 半导体存储装置和半导体集成电路
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Application No.: US13609650Application Date: 2012-09-11
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Publication No.: US08687454B2Publication Date: 2014-04-01
- Inventor: Jin Abe , Osamu Ishibashi , Masahiro Ise
- Applicant: Jin Abe , Osamu Ishibashi , Masahiro Ise
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Staas & Halsey LLP
- Priority: JP2011-208380 20110926
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
In a semiconductor storage apparatus, an internal address generation unit generates, when receiving successive first and second external addresses, from the second external address an internal address for selecting any of the memory cells connected to bit lines and word lines except the bit line and word line connected to a memory cell to be selected according to the first external address. When receiving the successive external addresses, a memory cell connected to the same bit line and word line is not continuously selected, and erroneous readout due to rewriting of a value of the memory cell in a non-selected state is suppressed.
Public/Granted literature
- US20130077426A1 SEMICONDUCTOR STORAGE APPARATUS AND SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2013-03-28
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