Invention Grant
- Patent Title: Programming methods and memories
- Patent Title (中): 编程方法和记忆
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Application No.: US13176886Application Date: 2011-07-06
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Publication No.: US08687431B2Publication Date: 2014-04-01
- Inventor: Vishal Sarin , William H. Radke , Frankie F. Roohparvar
- Applicant: Vishal Sarin , William H. Radke , Frankie F. Roohparvar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/10
- IPC: G11C16/10
Abstract:
Methods of programming a memory and memories are disclosed. In at least one embodiment, a memory is programmed by determining a pretarget threshold voltage for a selected cell, wherein the pretarget threshold voltage is determined using pretarget threshold voltage values for at least one neighbor cell of the selected cell.
Public/Granted literature
- US20130010542A1 PROGRAMMING METHODS AND MEMORIES Public/Granted day:2013-01-10
Information query
