Invention Grant
- Patent Title: Nonvolatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US13589842Application Date: 2012-08-20
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Publication No.: US08687420B2Publication Date: 2014-04-01
- Inventor: Noboru Shibata , Kazunori Kanebako
- Applicant: Noboru Shibata , Kazunori Kanebako
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-171371 20090722
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A semiconductor memory device which includes multi-bit memory cells that store multi-bit data and memory cells that store data of fewer bits then that of the multi-bit data. Thus, the semiconductor memory device includes a plurality of memory cells which store n-bit (where n is a natural number that is equal to or larger than 2) data for one cell. Among the plurality of memory cells, h-bit (h≦n) data is stored in a memory MLC of a first region MLB, and i-bit (i
Public/Granted literature
- US20130028019A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-01-31
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