Invention Grant
US08687420B2 Nonvolatile semiconductor memory device 有权
非易失性半导体存储器件

Nonvolatile semiconductor memory device
Abstract:
A semiconductor memory device which includes multi-bit memory cells that store multi-bit data and memory cells that store data of fewer bits then that of the multi-bit data. Thus, the semiconductor memory device includes a plurality of memory cells which store n-bit (where n is a natural number that is equal to or larger than 2) data for one cell. Among the plurality of memory cells, h-bit (h≦n) data is stored in a memory MLC of a first region MLB, and i-bit (i
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