Invention Grant
- Patent Title: Adjusting operational parameters for memory cells
- Patent Title (中): 调整存储单元的操作参数
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Application No.: US13204119Application Date: 2011-08-05
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Publication No.: US08687419B2Publication Date: 2014-04-01
- Inventor: Seong Je Park
- Applicant: Seong Je Park
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Techniques and devices relating to adjusting one or more operational parameters for memory cells are provided. One such device may include a detection unit configured to perform one or more reading operations on a set of memory cells to determine an upper bound of the threshold voltages of the set of memory cells. The device may further include a parameter adjustment unit configured to adjust one or more operational parameters for the set of memory cells based, at least in part, on the determined upper bound of the threshold voltages. Other techniques and devices are also provided.
Public/Granted literature
- US20130033933A1 ADJUSTING OPERATIONAL PARAMETERS FOR MEMORY CELLS Public/Granted day:2013-02-07
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