Invention Grant
- Patent Title: Sense scheme for phase change material content addressable memory
- Patent Title (中): 相变材料内容可寻址存储器的感应方案
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Application No.: US13407813Application Date: 2012-02-29
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Publication No.: US08687398B2Publication Date: 2014-04-01
- Inventor: Leland Chang , Chung H. Lam , Jing Li , Robert K. Montoye
- Applicant: Leland Chang , Chung H. Lam , Jing Li , Robert K. Montoye
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Ido Tuchman; Vazken Alexanian
- Main IPC: G11C15/00
- IPC: G11C15/00

Abstract:
A sensing circuit and method for sensing match lines in content addressable memory. The sensing circuit includes an inverter electrically coupled in a feedback loop to a match line. The inverter includes an inverting threshold of the match line. The match line is charged to substantially a first voltage threshold during a pre-charge phase. An evaluation phase occurs when the match line voltage drops from substantially the first voltage threshold to substantially the second voltage threshold.
Public/Granted literature
- US20130223121A1 SENSE SCHEME FOR PHASE CHANGE MATERIAL CONTENT ADDRESSABLE MEMORY Public/Granted day:2013-08-29
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