Invention Grant
US08687398B2 Sense scheme for phase change material content addressable memory 有权
相变材料内容可寻址存储器的感应方案

Sense scheme for phase change material content addressable memory
Abstract:
A sensing circuit and method for sensing match lines in content addressable memory. The sensing circuit includes an inverter electrically coupled in a feedback loop to a match line. The inverter includes an inverting threshold of the match line. The match line is charged to substantially a first voltage threshold during a pre-charge phase. An evaluation phase occurs when the match line voltage drops from substantially the first voltage threshold to substantially the second voltage threshold.
Public/Granted literature
Information query
Patent Agency Ranking
0/0